Course unit, curriculum year 2025–2026
EE.ELE.450
Semiconductor Device Physics, 5 cr
Tampere University
- Description
- Completion options
Teaching periods
Active in period 1 (1.8.2025–19.10.2025)
Active in period 3 (1.1.2026–1.3.2026)
Active in period 4 (2.3.2026–31.5.2026)
Course code
EE.ELE.450Language of instruction
EnglishAcademic years
2024–2025, 2025–2026, 2026–2027Level of study
Advanced studiesGrading scale
General scale, 0-5Persons responsible
Responsible teacher:
Sayani MajumdarResponsible organisation
Faculty of Information Technology and Communication Sciences 100 %
Coordinating organisation
Electrical Engineering Studies 100 %
Core content
- Materials physics: energy bands, charge carriers, doping
- Junctions: metal-semiconductor, p-n, tunnel
- Devices: Schottky diode, p-n junction diode, tunnel diode, junction transistor, field effect transistor, photovoltaic devices
Specialist knowledge
- Metal oxide and 2D semiconductors
- Memristors, Spintronics and Ferroelectric Devices
Learning outcomes
Prerequisites
Further information
Learning material
Equivalences
Studies that include this course
Completion option 1
Attendance of at least 75% of the lectures and passing the final exam. Students may also receive some extra credit by completing the weekly exercises.
All parts of the completion option are compulsory.
Participation in teaching
Contact teaching
07.01.2026 – 27.04.2026
Active in period 3 (1.1.2026–1.3.2026)
Active in period 4 (2.3.2026–31.5.2026)